Ultra-thin Magnetic Materials Have Been Developed In The United States

- Feb 28, 2019-

Ultra-thin magnetic materials have been developed in the United States. It is expected to be used to develop new types of storage devices


A team of scientists in the United States has developed an ultra-thin magnetic material based on a two-dimensional magnet called chromium triiodide, which could be used in new storage devices to dramatically increase the density of information storage and reduce energy consumption. The study, published in the current issue of the journal science, shows that the researchers used a new two-dimensional magnetic material, chromium triiodide, to store information by regulating the flow of electrons based on "electron spin."


Development of ultrathin magnetic materials

Xiaodong xu and his team at the university of Washington and the Massachusetts institute of technology first created a two-dimensional magnet in 2017 using chromium triiodide. A two-dimensional magnet is a material in which only one layer of atoms remains magnetic. The crystal structure of chromium triiodide is layered, and the single-atom-thick material has permanent magnetic properties at temperatures below minus 228 degrees Celsius. The material also exhibits unique interlaminar antiferromagnetism at low temperatures and can be used efficiently to allow or inhibit the flow of electrons.


The researchers placed two layers of chromium triiodide between two layers of conductive graphene. When the electrons in the two layers of chromium triiodide had the same or opposite spin direction, the electrons could pass through or be basically blocked, a phenomenon known as the "magnetoresistance tunneling effect." The structure that can realize this effect is called "magnetic tunnel junction", which is the basic unit of magnetic information storage.


They found that increasing the number of chromium triiodide layers, unlike traditional "magnetic tunneling junctions," allows for a greater combination of electron spins, potentially boosting the information storage capacity of individual devices. The team achieved a "magnetoresistor tunneling effect" 10 times greater than existing technology in four-layer nano-devices.